Monolithic integration of InGaAsP/InP semiconductor lasers using the stop-cleaving technique

Journal Article · Tue Jul 01 04:00:00 EDT 1986 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/JQE.1986.1073085· OSTI ID:5567710

Antreasyan, A; Napholtz, S G; Wilt, D P; Garbinski, P A

In this paper the authors describe the stop-cleaving technique for locally cleaving the mirrors of semiconductor lasers without cleaving the entire substrate, and its applications. The technique is suitable for batch processing with a good yield and, therefore, can be applied to preparing optoelectronic integrated circuits (OEIC's). InGaAsP/InP double-channel-planar-buried-heterostructure lasers emitting at 1.3 ..mu..m are fabricated utilizing this technique with threshold currents as low as 20 mA and differential quantum efficiencies as high as 60 percent (two facets). The implementation of this technique for preparing a monolithically integrated pair of lasers is also demonstrated. The integrated dual-laser configuration is utilized to obtain a monolithically integrated laser-detector pair by operating one of the lasers under reserve bias, and to enhance longitudinal mode discrimination by utilizing the optical feedback from the self-aligned stop-cleaved facet of the second cavity.

• Research Organization: AT and T Bell Labs., Murray Hill, NJ 07974
• OSTI ID: 5567710
• Journal Information: IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. QE-22:7; ISSN IEJQA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CLEAVAGE
CRYSTAL STRUCTURE
CURRENTS
EFFICIENCY
ELECTRIC CURRENTS
ELECTRONIC CIRCUITS
FABRICATION
FEEDBACK
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INTEGRATED CIRCUITS
LASER CAVITIES
LASER MIRRORS
LASERS
MICROELECTRONIC CIRCUITS
MICROSTRUCTURE
MIRRORS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
QUANTUM EFFICIENCY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SUBSTRATES
THRESHOLD CURRENT