Saturable-trap analysis of solute segregation applied to oxygen trapping in neutron-irradiated vanadium

Conference · Wed Nov 01 04:00:00 EST 1978

DOI:https://doi.org/10.1016/0022-3115(79)90601-9· OSTI ID:6170715

Wechsler, M S; Foster, R E

The activation energy for the 0.2 T/sub m/ resistivity annealing stage in neutron-irradiated vanadium containing 61 wt ppM O was determined to be 1.21 +- 0.06 eV. This value is reasonably close to the oxygen diffusion activation energy in V of 1.26 to 1.28 eV. An extrinsic mechanism for the 0.2 T/sub m/ annealing stage is indicated, involving O migration and trapping at radiation-produced defect clusters. A simple saturable trap model for the trapping of interstitial impurity atoms at radiation-produced defect clusters is described. The model is applied to the isothermal annealing curves for V containing O. A good fit to the shape of the annealing curves is obtained and approximate agreement to the measured activation energy is found. However, the model appears to overestimate the amount of O participating in the trapping process.

• Research Organization: Ames Lab., IA (USA)
• DOE Contract Number: W-7405-ENG-82
• OSTI ID: 6170715
• Report Number(s): IS-M-170; CONF-781194-1
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360106* -- Metals & Alloys-- Radiation Effects
ACTIVATION ENERGY
ANNEALING
BARYONS
CRYOGENIC FLUIDS
DEFECTS
DIFFUSION
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELEMENTARY PARTICLES
ELEMENTS
ENERGY
FERMIONS
FLUIDS
HADRONS
HEAT TREATMENTS
LATTICE PARAMETERS
MATHEMATICAL MODELS
METALS
NEUTRONS
NONMETALS
NUCLEONS
OXYGEN
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEGREGATION
TRANSITION ELEMENTS
TRAPPING
VANADIUM