Fabrication and thermoelectric properties on n-type SbI{sub 3}-doped Bi{sub 2}Te{sub 2.85}Se{sub 0.15} compounds by hot extrusion
Journal Article
·
· Materials Research Bulletin
- Inha Univ., Inchon (Korea, Republic of). Dept. of Metallurgical Engineering
- Chung-ju National Univ., Chungbuk (Korea, Republic of). Dept. of Materials Engineering
The n-type 0.1 wt% SbI{sub 3}-doped bi{sub 2}Te{sub 2.85}Se{sub 0.15} compounds were fabricated by hot extrusion in the temperature range 300--510 C under an extrusion ratio of 20:1. The extruded compounds were highly dense. The grains were small, equiaxed ({approximately} 1.0 {micro}m), and contained many dislocations due to the dynamic recrystallization during the extrusion. The grains were also preferentially oriented through the extrusion. The bending strength and the figure of merit of the compounds, hot-extruded at 440 C, were 97 MPa and 2.62 {times} 10{sup {minus}3}/K, respectively.
- OSTI ID:
- 616351
- Journal Information:
- Materials Research Bulletin, Journal Name: Materials Research Bulletin Journal Issue: 4 Vol. 33; ISSN MRBUAC; ISSN 0025-5408
- Country of Publication:
- United States
- Language:
- English
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