Photoconductive semiconductor switch (PCSS) recovery

Conference · Sun Jan 01 04:00:00 EST 1989

DOI:https://doi.org/10.1109/PPC.1989.767511· OSTI ID:6154591

Zutavern, F. J.; Loubriel, G. M.; McKenzie, B. B.; O'Malley, W. M.; Hamil, R. A.; Schanwald, L. P.; Hijalmarson, H. P.

Attempts to use photoconductive semiconductors as high-power (10-100 kV, 0.1-2 kA) toggling switches with recovery times of 5-100 ns have stimulated the exploration of their recovery mechanisms. We have observed that optically triggered GaAs switches exhibit ''lock-on,'' i.e., when triggered, they do not recover as long as they are holding more than 4-8 kV/cm. Experiments are being performed to determine the minimum recovery time of these switches after lock-on, by immediately reducing fields or currents. As an alternative to GaAs, Si is a semiconductor that does not exhibit lock-on. It has a very long recovery time (greater than or equal to100 ..mu..s) that can be shortened to less than 100 ns with highly concentrated gold doping (greater than or equal to10/sup 15//cm/sup 3/). Device models that predict behavior of PCSS and experiments on the recovery of GaAs and Au:Si switches are presented. 12 refs., 13 fig.

• Research Organization: Sandia National Labs., Albuquerque, NM (USA)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6154591
• Report Number(s): SAND-88-3356C; CONF-890665-2; ON: DE89012657
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
DESIGN
ELECTRICAL EQUIPMENT
ELECTRONIC CIRCUITS
ENERGY SYSTEMS
EQUATIONS
EQUIPMENT
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
MATHEMATICAL MODELS
PHOTOCONDUCTORS
PNICTIDES
POWER SYSTEMS
PULSE CIRCUITS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR SWITCHES
SWITCHES