skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Preparation and properties of evaporated CdTe films compared with single crystal CdTe. Progress report No. 3, May 1-July 31, 1981

Technical Report ·
DOI:https://doi.org/10.2172/6153848· OSTI ID:6153848

Preparation of the hot-wall vacuum deposition system nears completion and the first trial evaporation should take place in mid October. A UTI 100C Mass Analyzer with a 1 to 300 AMU capability has been ordered for the system. Preliminary tests indicate good temperature tracking between the furnace core and the CdTe source itself. Homojunction cells prepared by HWVE deposition of n-CdTe on p-CdTe substrates in October 1980 show no significant change in dark or light properties after open-circuit storage for the next 9 months. CdTe single crystal boules have been grown with P, As and Cs impurity. For P impurity it appears from our data that the segregation coefficient is close to unity, that the value of hole density is controlled by the P and not by some unknown background acceptor, and that growth with excess Cd gives slightly higher values of hole density than growth with excess Te. CdTe:As crystals appear similar to CdTe:P crystals.

Research Organization:
Solar Energy Research Inst. (SERI), Golden, CO (United States)
DOE Contract Number:
AC02-77CH00178
OSTI ID:
6153848
Report Number(s):
SERI/PR-9330-1-T3; ON: DE82000228
Country of Publication:
United States
Language:
English