Radiation effects in 1. 06-. mu. m InGaAs LED's and Si photodiodes
Because of the low-intrinsic and radiation-induced attenuation losses in glass fibers in the wavelength range 1.0--1.3 ..mu..m, emitters and detectors operating in this range are of practical importance for radiation-environment applications. We have studied the effects of both ..gamma.. and neutron irradiation on the properties of InGaAs LED's emitting at 1.06 ..mu..m and Si photodiode detectors optimized for this wavelength. While the preirradiation light output of the InGaAs LED's is low relative to many GaAs LED's, the InGaAs devices exhibit less sensitivity to radiation than the most radiation-hardened GaAs LED's. No significant neutron-induced light-output degradation is observed below 1 x 10/sup 13/ n/cm/sup 2/, while 2 x 10/sup 7/ Co-60 rads are required before any ..gamma..-induced degradation is observed. In addition, a significant portion of the ..gamma..-induced light-output degradation can be recovered by applying forward-bias currents of the order of 50 mA in magnitude. Although ..gamma.. irradiation up to 2 x 10/sup 8/ rads has essentially no effect on the photodiodes, neutron fluences above 2 x 10/sup 14/ n/cm/sup 2/ cause a reduction in responsivity. Analysis of the neutron-induced increases in the photodiode leakage current with the guard ring attached reveals a lifetime-damage constant product of 4 x 10/sup -12/ cm/sup 2//n. Laboratory isolators made up of these emitters and detectors have typical preirradiation current-transfer ratios of 5 x 10/sup -4/ which decrease by a factor of 10 after an irradiation of 1.5 x 10/sup 14/ n/cm/sup 2/.
- Research Organization:
- Sandia Laboratories, Albuquerque, New Mexico 87185
- OSTI ID:
- 6152691
- Journal Information:
- J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 50:8; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
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46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ARSENIC COMPOUNDS
ARSENIDES
ATTENUATION
CHEMICAL RADIATION EFFECTS
CHEMICAL REACTIONS
CHEMISTRY
DECOMPOSITION
ELEMENTS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM
IRRADIATION
LIGHT EMITTING DIODES
LOSSES
MEASURING INSTRUMENTS
METALS
PHOTODIODES
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION CHEMISTRY
RADIATION DETECTORS
RADIATION EFFECTS
RADIOLYSIS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMIMETALS
SENSITIVITY
SILICON