GaAs pattern etching with little damage by a combination of Ga sup + focused-ion-beam irradiation and subsequent Cl sub 2 gas etching
- Optoelectronics Technology Research Laboratory, 5-5 Tohkodai, Tsukuba, Ibaraki 300-26, Japan (JP)
Pattern formation on GaAs by Ga{sup +} focused-ion-beam (FIB) irradiation and subsequent Cl{sub 2} gas etching was carried out. A higher etch rate at the FIB-irradiated area compared with that not irradiated under Cl{sub 2} gas allows pattern construction without a mask process. The degree of residual crystal damage was evaluated using photoluminescence (PL) intensity measurements. The PL intensity in the etched region was one order of magnitude stronger than that of FIB sputtering, and was several times stronger than that of Ga{sup +} FIB-assisted Cl{sub 2} etching. Etch depths of the order of 100 nm, which is five times deeper than that obtained by FIB sputtering, were efficiently performed using moderate Ga{sup +}-ion doses.
- OSTI ID:
- 6147499
- Journal Information:
- Journal of Applied Physics; (USA), Vol. 68:12; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
GALLIUM ARSENIDES
ETCHING
DAMAGE
GALLIUM IONS
ION BEAMS
PHOTOLUMINESCENCE
PHYSICAL RADIATION EFFECTS
SPUTTERING
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
CHARGED PARTICLES
GALLIUM COMPOUNDS
IONS
LUMINESCENCE
PNICTIDES
RADIATION EFFECTS
SURFACE FINISHING
656003* - Condensed Matter Physics- Interactions between Beams & Condensed Matter- (1987-)