Characterization of subsurface damage in GaAs processed by Ga/sup +/ focused ion-beam-assisted Cl/sub 2/ etching using photoluminescence

Journal Article · Tue Aug 01 00:00:00 EDT 1989 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.344439· OSTI ID:5926131

Taneya, M; Sugimoto, Y; Akita, K

Subsurface damage in GaAs processed by a Ga/sup +/ focused ion-beam-assisted Cl/sub 2/ etching is studied by photoluminescence (PL) measurement. The PL intensity of the processed sample decreased to (1)/(30) -- (1)/(40) compared to that of the unprocessed sample. The recovery of PL intensity by a step removal of the damaged layer is observed as a function of the removed layer thickness. The removal of a 0.7-..mu..m-thick surface layer enables the PL intensity to be recovered perfectly, which leads to the postulate that the damaged layer thickness is 0.7 ..mu..m at least, which is much larger than the ion range (about 0.01 ..mu..m). The recovery of PL intensity is analyzed on a one-dimensional model in the direction normal to the sample surface. Computer simulations of PL intensity are carried out. The calculated result fully explains the experimental PL intensity recovery as a function of the removed layer thickness, which gives the profile of subsurface damage in the sample.

• Research Organization: Optoelectronics Technology Research Laboratory, 5-5 Tohkodai, Tsukuba, Ibaraki 300-26, Japan(JP)
• OSTI ID: 5926131
• Journal Information: J. Appl. Phys.; (United States), Vol. 66:3
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM ARSENIDES
PHYSICAL RADIATION EFFECTS
COMPUTERIZED SIMULATION
ETCHING
GALLIUM IONS
ION COLLISIONS
MATHEMATICAL MODELS
ONE-DIMENSIONAL CALCULATIONS
PHOTOLUMINESCENCE
ARSENIC COMPOUNDS
ARSENIDES
CHARGED PARTICLES
COLLISIONS
GALLIUM COMPOUNDS
IONS
LUMINESCENCE
PNICTIDES
RADIATION EFFECTS
SIMULATION
SURFACE FINISHING
360605* - Materials- Radiation Effects