Optically tuned, all-semiconductor optical interference filter

Journal Article · Mon Oct 26 04:00:00 EST 1987 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.98712· OSTI ID:6139934

Gourley, P L; Biefeld, R M; Johnson, P B

Optical tuning of an epitaxial, all-semiconductor optical interference filter is reported. The filter is a high reflector composed of alternating, strained layers of GaP (360 A) and GaAs/sub 0.2/P/sub 0.8/ (360 A) grown by metalorganic chemical vapor deposition. With low optical power, these reflectors exhibit reflectances up to 90% at 510 nm over a 10-nm bandwidth. With absorbed optical pulses of energy density 3 mJ/cm/sup 2/, this high-reflectance zone can be blue shifted by 20 A. As a result, very large changes in reflectance can be produced. The effect is interpreted as a plasma-induced refractive index depression in a semiconductor superlattice. Furthermore, the layer strain enhances the optically induced index change of the high reflector compared to that in bulk materials.

• Research Organization: Sandia National Laboratories, Albuquerque, New Mexico 87185
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6139934
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 51:17; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
DEPOSITION
FABRICATION
FILTERS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INTERFERENCE
LAYERS
OPTICAL FILTERS
OPTICAL PROPERTIES
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
REFLECTIVITY
SUPERLATTICES
SURFACE COATING
SURFACE PROPERTIES
TUNING