Single-crystal, optical interference filters and integrated high reflector/photodiode using multilayers of GaP and GaAs/sub x-italic/P/sub 1-//sub x-italic/

Journal Article · Mon Aug 04 04:00:00 EDT 1986 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.97619· OSTI ID:5586176

Gourley, P L; Biefeld, R M; Zipperian, T E

Using metalorganic chemical vapor deposition, we have produced single-crystal optical interference filters (high reflectors and antireflectors) with alternating quarter-wave thick layers (in the range 300--600 A-circle) of GaP and GaAs/sub x-italic/P/sub 1-//sub x-italic/. We have measured reflectance values from 0.08 to 0.90 at selected wavelengths from 460 to 750 nm. These filters have the unique feature that their design wavelength can be shorter than that corresponding to the energy band gap of the multilayer. In addition, we have produced an integrated optical detector in which a photodiode and an electrically active high reflector were grown sequentially in a single growth run. The spectral characteristics of the filters and integrated detector are reported here.

• Research Organization: Sandia National Laboratories, Albuquerque, New Mexico 87185
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5586176
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 49:5; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
440300 -- Miscellaneous Instruments-- (-1989)
47 OTHER INSTRUMENTATION
ARSENIC COMPOUNDS
ARSENIDES
FABRICATION
FILTERS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
LAYERS
LIGHT TRANSMISSION
OPTICAL FILTERS
OPTICAL PROPERTIES
OPTICAL REFLECTION
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTODETECTORS
PHOTODIODES
PHYSICAL PROPERTIES
PNICTIDES
REFLECTION
REFLECTIVITY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SURFACE PROPERTIES