Multistable mode locking of InGaAsP semiconductor lasers

Journal Article · Mon Sep 21 00:00:00 EDT 1987 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.98847· OSTI ID:6134090

Kuznetsov, M; Tsang, D Z; Walpole, J N; Liau, Z L; Ippen, E P

We have investigated the pulsation behavior of InGaAsP semiconductor lasers with a proton-bombarded segment. These lasers emit picosecond (30--70 ps) pulses at gigahertz (0.6--3.0 GHz) rates. An antireflection-coated diode in an external cavity is passively mode locked and multistable; as many as four co-existing states are observed. Interlocking hysteresis loops are observed in the pulsation frequency, pulse width, and output power as functions of the bias current. A delayed feedback model explains qualitative features of the multistable mode locking. To our knowledge this is the first report of multistability of laser pulsation.

• Research Organization: Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
• OSTI ID: 6134090
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 51:12; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ANTIREFLECTION COATINGS
ARSENIC COMPOUNDS
ARSENIDES
COATINGS
DATA
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFORMATION
LASERS
MODE LOCKING
NUMERICAL DATA
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
PULSES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
STABILITY