Noise characterization of a mode-locked InGaAsP semiconductor diode laser

Journal Article · Wed Oct 31 23:00:00 EST 1990 · IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (USA)

DOI:https://doi.org/10.1109/3.62104· OSTI ID:5771691

Burns, D; Finch, A; Sleat, W; Sibbett, W ^[1]

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1. J.F. Allen Physics Research Lab., Dept. of Physics and Astronomy, Univ. of St. Andrews, North Haugh, St. Andrews, Fife, KY 16 9SS Scotland (GB)

A noise characterization of a mode-locked InGaAsP semiconductor diode laser operating at 1.5 {mu}m has been performed by examining the power spectrum of the electrical pulse train derived from an ultrafast InGaAs pin photodiode. The laser performance has been assessed where two types of RF modulating sources were used and the effect of optical amplification on the laser pulse train using an erbium-doped fiber amplifier has been examined.

• OSTI ID: 5771691
• Journal Information: IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (USA), Journal Name: IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (USA) Vol. 26:11; ISSN 0018-9197; ISSN IEJQA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
ALLOYS
AMPLIFICATION
AMPLIFIERS
ARSENIC COMPOUNDS
ELECTROMAGNETIC RADIATION
ELECTRONIC EQUIPMENT
EQUIPMENT
ERBIUM ADDITIONS
ERBIUM ALLOYS
FIBERS
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
INFRARED RADIATION
LASERS
MODE LOCKING
MODULATION
NEAR INFRARED RADIATION
PERFORMANCE TESTING
PHOSPHORUS COMPOUNDS
PULSES
RADIATIONS
RARE EARTH ADDITIONS
RARE EARTH ALLOYS
RF SYSTEMS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR LASERS
SIGNAL-TO-NOISE RATIO
SOLID STATE LASERS
TESTING