Modified growth kinetics of ion induced yttrium--silicide layers during subsequent thermal annealing

Journal Article · Sun Dec 01 23:00:00 EST 1991 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.105820· OSTI ID:6132867

Alford, T L; Mayer, J W ^[1]

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1. Materials Science and Engineering Department, Bard Hall, Cornell University, Ithaca, New York (USA)

Yttrium and amorphous silicon bilayers were irradiated with 600-keV inert ions between {minus}190 and 265 {degree}C. Ion-induced YSi{sub 1.7} layers occurred in those samples irradiated above {ge} (R18)205 {degree}C. These ion-mixed samples were thermally annealed at temperatures between 325 and 380 {degree}C. The diffusion-limited growth was observed only in those samples which had an ion-induced YSi{sub 1.7} layer present prior to thermal annealing. This type of growth is distinctly different from the interface limited, nonuniform, and irreproducible growth seen during typical thermal annealing of yttrium and silicon bilayers. This type of growth still occurred in those samples annealed after ion irradiations at {le}190 {degree}C.

• OSTI ID: 6132867
• Journal Information: Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 59:23; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

665300* -- Interactions Between Beams & Condensed Matter-- (1992-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
BEAMS
CRYSTAL GROWTH
DEPOSITION
ELASTIC SCATTERING
ENERGY BEAM DEPOSITION
ENERGY RANGE
HEAT TREATMENTS
ION BEAMS
ION IMPLANTATION
KEV RANGE
KEV RANGE 100-1000
MORPHOLOGY
RUTHERFORD SCATTERING
SCATTERING
SILICIDES
SILICON COMPOUNDS
SURFACE COATING
TRANSITION ELEMENT COMPOUNDS
YTTRIUM COMPOUNDS
YTTRIUM SILICIDES