Bistability in two-mode semiconductor lasers via gain saturation

Journal Article · Mon Nov 02 04:00:00 EST 1987 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.98686· OSTI ID:6131486

Tang, C L; Schremer, A; Fujita, T

The conditions required to achieve bistability in two-mode semiconductor lasers via the nonlinearity associated with gain saturation are discussed. The laser can be switched between the bistable states through coherent or incoherent optical control. Wavelength bistability in such a laser is demonstrated experimentally.

• Research Organization: Cornell University, Ithaca, New York 14853
• OSTI ID: 6131486
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 51:18; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
AMPLIFICATION
FABRICATION
GAIN
LASERS
OPERATION
PERFORMANCE
SATURATION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS