Heteroepitaxial silicon growth on polycrystalline MoSi/sub 2/
Heteroepitaxial silicon was grown on polycrystalline MoSi/sub 2/ by electron beam evaporation at 800 /sup 0/C in an ultrahigh vacuum. The silicon films with a thickness between 2 and 12 ..mu..m grew with either an (111) or (233) orientation. The growth and morphology of the silicon deposit was studied as a function of temperature and the partial pressure of oxygen. Depositions at substrate temperatures of 950 and 1100 /sup 0/C exceeded the epitaxial temperatures producing films that had faceted grains measuring 2--8 ..mu..m in cross section along with larger grains measuring nearly 200 ..mu..m across. The introduction of 10/sup -10/ Torr partial pressure of oxygen during deposition at 1100 /sup 0/C changed the morphology and eliminated the large grains. The presence of oxygen at 800 /sup 0/C prevented epitaxial growth.
- Research Organization:
- Ames Laboratory, USDOE, Iowa State University, Ames, Iowa 50011
- DOE Contract Number:
- W-7405-ENG-82
- OSTI ID:
- 6128490
- Journal Information:
- J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 52:8; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360601* -- Other Materials-- Preparation & Manufacture
BEAMS
CHANNELING
CRYSTAL GROWTH
CRYSTAL LATTICES
CRYSTAL STRUCTURE
CRYSTALS
DATA
DIMENSIONS
ELECTRON BEAMS
ELECTRON MICROSCOPY
ELEMENTS
EPITAXY
EVAPORATION
GRAIN SIZE
INFORMATION
LEPTON BEAMS
MICROSCOPY
MICROSTRUCTURE
MOLYBDENUM COMPOUNDS
MOLYBDENUM SILICIDES
MORPHOLOGY
OPTICAL MICROSCOPY
ORIENTATION
PARTICLE BEAMS
PHASE TRANSFORMATIONS
POLYCRYSTALS
PRESSURE DEPENDENCE
SCANNING ELECTRON MICROSCOPY
SEMIMETALS
SILICIDES
SILICON
SILICON COMPOUNDS
SIZE
TEMPERATURE DEPENDENCE
THICKNESS
TRANSITION ELEMENT COMPOUNDS
VERY HIGH TEMPERATURE