Growth of polycrystalline silicon on molybdenum, tantalum, tungsten, and their disilicides

Journal Article · Sun Feb 28 23:00:00 EST 1982 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.331638· OSTI ID:5591196

Campisi, G J; Bevolo, A J; Shanks, H R; Schmidt, F A

Silicon was electron beam vaporized in an ultralow pressure system on substrates of molybdenum, tantalum, and tungsten between 550--850 /sup 0/C. Polycrystalline silicon was grown on the molybdenum and tungsten substrates at 550 /sup 0/C with grains measuring approx.0.3 ..mu..m in cross section and having a )110) orientation. This orientation was attributed to the deposition technique and substrate temperature. At 670 /sup 0/C silicon reacted with the tantalum substrates to form a thin interfacial layer of TaSi/sub 2/ but grew with a )110) and )111) orientation. At this same sample temperature )111) and )110) polycrystalline silicon was detected on molybdenum and tungsten. By increasing the substrate temperature to 750 /sup 0/C, silicon reacted with the metals to produce ''columnar'' structures composed of )110), )111), )100), )311), or )331) silicon crystallites that grew on a layer of the respective metal disilicide. Phosphorus coevaporated with the silicon retarded the rate of the silicide growth at 670 and 750 /sup 0/C. Only the refractory metal disilicides MoSi/sub 2/, TaSi/sub 2/, and WSi/sub 2/ were obtained at 850 /sup 0/C by reaction of the vapor deposited silicon with the substrate metal.

• Research Organization: Ames Laboratory, USDOE, Iowa State University, Ames, Iowa 50011
• OSTI ID: 5591196
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 53:3; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
BEAMS
CHEMICAL REACTIONS
CRYSTAL GROWTH
CRYSTAL LATTICES
CRYSTAL STRUCTURE
ELECTRON BEAMS
ELEMENTS
EVAPORATION
GRAIN SIZE
HIGH TEMPERATURE
INTERFACES
LAYERS
LEPTON BEAMS
METALS
MICROSTRUCTURE
MOLYBDENUM
ORIENTATION
PARTICLE BEAMS
PHASE TRANSFORMATIONS
RECRYSTALLIZATION
REFRACTORY METALS
SEMIMETALS
SILICIDES
SILICON
SILICON COMPOUNDS
SIZE
SUBSTRATES
TANTALUM
TEMPERATURE DEPENDENCE
TRANSITION ELEMENTS
TUNGSTEN
VERY HIGH TEMPERATURE