Symmetric arsenic dimers on the Si(100) surface
Journal Article
·
· Phys. Rev. Lett.; (United States)
Deposition of arsenic on Si(100) results in a well-ordered, highly passivated, and stable surface. From a comparison between angle-resolved photoemission data and ab initio pseudopotential calculations we conclude that the observed 2 x 1 reconstruction is caused by the formation of symmetric As-As dimers on the surface. The calculated surface band dispersion for this model is in excellent agreement with experiment.
- Research Organization:
- Xerox Palo Alto Research Center, Palo Alto, California 94304
- OSTI ID:
- 6127779
- Journal Information:
- Phys. Rev. Lett.; (United States), Journal Name: Phys. Rev. Lett.; (United States) Vol. 56:5; ISSN PRLTA
- Country of Publication:
- United States
- Language:
- English
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