Chemical vapor deposition of ruthenium and ruthenium dioxide films
The preparation of Ru and RuO/sub 2/ thin films by organometallic chemical vapor deposition and an investigation of the films' properties are reported. Ru is of interest for metallization in integrated circuit fabrication because its thermodynamically stable oxide, RuO/sub 2/, also exhibits metallic conductivity. As a result, oxidation during processing of Ru is a less critical concern than in current metallization technology. Taking advantage of the benefits of chemical vapor deposition, such as conformal coverage and low temperature, damage-free deposition, we have deposited Ru, RuO/sub 2/, and Ru/RuO/sub 2/ by pyrolysis of three organoruthenium complexes. Films of a given phase composition were deposited under a wide variety of conditions and exhibited large variations in electrical resistivity and carbon content. The best Ru film, produced from Ru/sub 3/(CO)/sub 12/ at 300/sup 0/C in vacuum, had a resistivity of 16.9 ..mu cap omega..-cm and exhibited excellent adhesion to Si and SiO/sub 2/ substrates. The best RuO/sub 2/ film, produced from Ru(C/sub 5/H/sub 5/)/sub 2/ at 575/sup 0/C in O/sub 2/, had a resistivity of 89.9 ..mu cap omega..-cm and similarly exhibited excellent adhesion. Rutherford backscattering studies show tha Ru and RuO/sub 2/ films are effective diffusion barriers between Al and Si up to annealing temperatures of about 550/sup 0/ and 600/sup 0/C (1/2 h exposure), respectively. Thus, they are significantly better than the currently used W films, which are only effective to about 500/sup 0/C.
- Research Organization:
- ATandT Bell Laboratories, Murray Hill, NJ
- OSTI ID:
- 6123786
- Journal Information:
- J. Electrochem. Soc.; (United States), Journal Name: J. Electrochem. Soc.; (United States) Vol. 132:11; ISSN JESOA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360101* -- Metals & Alloys-- Preparation & Fabrication
360102 -- Metals & Alloys-- Structure & Phase Studies
ALUMINIUM
ANNEALING
BACKSCATTERING
CARBON
CHALCOGENIDES
CHEMICAL COATING
CHEMICAL COMPOSITION
CHEMICAL VAPOR DEPOSITION
COMPARATIVE EVALUATIONS
DEPOSITION
DIFFUSION BARRIERS
ELECTRICAL PROPERTIES
ELECTRONIC CIRCUITS
ELEMENTS
FABRICATION
FILMS
HEAT TREATMENTS
INTEGRATED CIRCUITS
METALS
MICROELECTRONIC CIRCUITS
NONMETALS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
PLATINUM METALS
REFRACTORY METAL COMPOUNDS
RUTHENIUM
RUTHENIUM COMPOUNDS
RUTHENIUM OXIDES
SCATTERING
SEMIMETALS
SILICON
SURFACE COATING
THERMODYNAMIC PROPERTIES
THIN FILMS
TRANSITION ELEMENT COMPOUNDS
TRANSITION ELEMENTS
TUNGSTEN
VARIATIONS