Direct observation of voltage barriers in ZnO varistors

Journal Article · Fri Jun 01 04:00:00 EDT 1979 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.90651· OSTI ID:6119375

Krivanek, O L; Williams, P; Lin, Y

Voltage barriers in a ZnO varistor have been imaged by voltage-contrast scanning electron microscopy. They are due to grain boundaries and are capable of supporting voltage differences of up to about 4 V.

• Research Organization: Department of Materials Science and Mineral Engineering and the Materials and Molecular Research Division, Lawrence Berkeley Laboratory, University of California, Berkeley, California 94720
• OSTI ID: 6119375
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 34:11; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
CHALCOGENIDES
CRYSTAL STRUCTURE
CRYSTALS
ELECTRIC POTENTIAL
ELECTRICAL EQUIPMENT
ELECTRON MICROSCOPY
ELECTRON SCANNING
EQUIPMENT
GRAIN BOUNDARIES
IMAGES
MICROSCOPY
MICROSTRUCTURE
OXIDES
OXYGEN COMPOUNDS
POLYCRYSTALS
RESISTORS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR RESISTORS
TRANSIENTS
ZINC COMPOUNDS
ZINC OXIDES