Effect of grain-size distribution on the barrier voltage of ZnO varistors

Journal Article · Thu Oct 01 04:00:00 EDT 1987 · Advanced Ceramic Materials; (USA)

DOI:https://doi.org/10.1111/j.1551-2916.1987.tb00159.x· OSTI ID:6073286

Sung, Gun Yong; Kim, Chong Hee; Oh, Myung Hwan ^[1]

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1. Korea Advanced Institute of Science and Technology, Seoul (Korea)

To prove the discrepancy between the calculated barrier voltage and the measured barrier voltage resulting from the broad grain-size distribution, the microstructures and grain size distribution with relation to I-V characteristics of ZnO-Bi{sub 2}O{sub 3}-MnO and ZnO-Bi{sub 2}O{sub 3}-MnO-TiO{sub 2} systems sintered at various temperatures have been investigated. Two barrier voltages measured from the direct and indirect methods were compared as a function of the sintering temperature and the standard deviation of the average grain size. Regardless of the sintering temperature, the measured barrier voltages obtained from the direct method were 5 V at 10 {mu}A and 6 V at 4 {mu}A for the system with and without TiO{sub 2}, respectively. Statistical analysis showed that the conventional method for calculating the number of junction barriers in the varistor grain boundary should be adequately modified to reduce the discrepancy of barrier voltages.

• OSTI ID: 6073286
• Journal Information: Advanced Ceramic Materials; (USA), Journal Name: Advanced Ceramic Materials; (USA) Vol. 2:4; ISSN ACEME; ISSN 0883-5551
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360202* -- Ceramics
Cermets
& Refractories-- Structure & Phase Studies
360204 -- Ceramics
Cermets
& Refractories-- Physical Properties
BISMUTH COMPOUNDS
BISMUTH OXIDES
CHALCOGENIDES
CRYSTAL STRUCTURE
DATA
ELECTRIC CONDUCTIVITY
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
EQUIPMENT
EXPERIMENTAL DATA
GRAIN SIZE
INFORMATION
MANGANESE COMPOUNDS
MANGANESE OXIDES
MATERIALS
MICROSTRUCTURE
NUMERICAL DATA
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
RESISTORS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR RESISTORS
SINTERED MATERIALS
SIZE
TRANSITION ELEMENT COMPOUNDS
ZINC COMPOUNDS
ZINC OXIDES