Gallium arsenide films and solar cells on graphite substrates

Journal Article · Sat Sep 01 00:00:00 EDT 1979 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.326723· OSTI ID:6113756

Chu, S S; Chu, T L; Lan, M S

Gallium arsenide films have been deposited on graphite substrates by the reaction of gallium, hydrogen chloride, and arsine in a hydrogen flow. The structural and electrical properties of gallium arsenide films have been investigated. The interface between undoped gallium arsenide and graphite exhibits rectifying characteristics; however, a heavily doped interlayer reduces the interface resistance to a tolerable level. MOS-type solar cells prepared from n-GaAs/n/sup +/-GaAs/graphite structures have AM1 efficiencies of higher than 6%.

• Research Organization: Southern Methodist University, Dallas, Texas 75275
• OSTI ID: 6113756
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 50:9; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
360603 -- Materials-- Properties
ARSENIC COMPOUNDS
ARSENIC HYDRIDES
ARSENIDES
CARBON
CHEMICAL REACTIONS
CRYOGENIC FLUIDS
DEPOSITION
DIRECT ENERGY CONVERTERS
DOPED MATERIALS
EFFICIENCY
ELECTRICAL PROPERTIES
ELEMENTS
FILMS
FLUID FLOW
FLUIDS
GALLIUM
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GRAPHITE
HYDRIDES
HYDROCHLORIC ACID
HYDROGEN
HYDROGEN COMPOUNDS
INORGANIC ACIDS
INTERFACES
LAYERS
METALS
N-TYPE CONDUCTORS
NONMETALS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR MATERIALS
SOLAR CELLS
SUBSTRATES