Continuous wave operation (77 K) of yellow (583. 6 nm) emitting AlGaInP double heterostructure laser diodes

Journal Article · Mon Mar 03 00:00:00 EST 1986 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.96505· OSTI ID:6113642

Hino, I; Kawata, S; Gomyo, A; Kobayashi, K; Suzuki, T

Continuous wave lasing operation with the shortest wavelength for semiconductor lasers was obtained from AlGaInP double heterostructure lasers at 77 K. The structure was grown by metalorganic vapor phase epitaxy. Lasing wavelength was 583.6 nm (yellow). Threshold current was 43 mA (1.9 kA/cm/sup 2/). Magnesium was adopted as a p-type dopant, and was proved to be preferable for a high aluminum composition AlGaInP cladding layer.

• Research Organization: Opto-Electronics Research Laboratories, NEC Corporation, 1-1 Miyazaki 4-chome, Miyamae-ku, Kawasaki 213, Japan
• OSTI ID: 6113642
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 48:9
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
ALUMINIUM PHOSPHIDES
STIMULATED EMISSION
GALLIUM PHOSPHIDES
INDIUM PHOSPHIDES
SEMICONDUCTOR LASERS
FABRICATION
OPERATION
CRYSTAL DOPING
EXPERIMENTAL DATA
HETEROJUNCTIONS
LASER RADIATION
MAGNESIUM
MEDIUM TEMPERATURE
THRESHOLD CURRENT
VAPOR DEPOSITED COATINGS
VAPOR PHASE EPITAXY
VISIBLE RADIATION
ALKALINE EARTH METALS
ALUMINIUM COMPOUNDS
COATINGS
CURRENTS
DATA
ELECTRIC CURRENTS
ELECTROMAGNETIC RADIATION
ELEMENTS
EMISSION
ENERGY-LEVEL TRANSITIONS
EPITAXY
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
INFORMATION
JUNCTIONS
LASERS
METALS
NUMERICAL DATA
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
420300* - Engineering- Lasers- (-1989)