A study of palladium silicide formed by focused ion beam implantation of palladium ions
The formation and properties of Pd{sub 2}Si formed by focused ion beam implantation of Pd ions into Si is presented in this thesis. An extensive microstructural study using transmission electron microscopy was undertaken and the as-implanted as well as annealed microstructure is shown. Results of other analysis techniques such as Rutherford back scattering and secondary ion mass spectrometry etc. are also presented. Kinetic information on the growth of Pd{sub 2}Si obtained by both microstructural and resistance measurements indicates that the activation energy for growth of the silicide is around 0.36 to 0.39 eV. This can be compared with the normally reported value of 1.5 eV for Pd{sub 2}Si formed by annealing thin film Pd on Si. The growth of the silicide was found to follow t{sup 1/2} kinetics. Microstructural observation of the as-implanted samples showed extensive in-situ formation of Pd{sub 2}Di and also surprisingly few defect structures. A heat transfer model for the implantation indicates no significant beam induced heating, and hence a defect assisted process mechanism is proposed as being responsible for the in-situ silicide formation. The Schottky characteristics of the implanted areas on n-Si were also measured using appropriate device structures. These characteristics were measured for various Pd+ doses as well as a function of annealing conditions. The barrier height of the as-implanted and low temperature annealed devices was around 0.6 eV. The high temperature annealed devices had a barrier height of around 0.73 eV which is typical of Pd{sub 2} Si on n-Si. The barrier height lowering in the former case may be attributed to deep levels in the underlying Si caused by unreacted Pd in the tail of the implant profile.
- Research Organization:
- Rensselaer Polytechnic Inst., Troy, NY (USA)
- OSTI ID:
- 6106889
- Resource Relation:
- Other Information: Thesis (Ph. D.)
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
PALLADIUM SILICIDES
FABRICATION
MICROSTRUCTURE
SILICON
ION IMPLANTATION
ACTIVATION ENERGY
ANNEALING
DEFECTS
ION BEAMS
PALLADIUM IONS
RUTHERFORD SCATTERING
TRANSMISSION ELECTRON MICROSCOPY
BEAMS
CHARGED PARTICLES
CRYSTAL STRUCTURE
ELASTIC SCATTERING
ELECTRON MICROSCOPY
ELEMENTS
ENERGY
HEAT TREATMENTS
IONS
MICROSCOPY
PALLADIUM COMPOUNDS
SCATTERING
SEMIMETALS
SILICIDES
SILICON COMPOUNDS
TRANSITION ELEMENT COMPOUNDS
360601* - Other Materials- Preparation & Manufacture
360602 - Other Materials- Structure & Phase Studies
360605 - Materials- Radiation Effects