Experimental study of the minority-carrier transport at the polysilicon-monosilicon interface

Journal Article · Mon Apr 01 04:00:00 EST 1985 · IEEE Trans. Electron Devices; (United States)

DOI:https://doi.org/10.1109/T-ED.1985.22024· OSTI ID:6102939

Neugroshel, A; Arienzo, M; Isaac, R D; Komem, Y

This paper presents the results of an experimental study to explore the mechanism of improved current gain in bipolar transistors with polysilicon emitter contacts. The electrical properties were measured using p-n junction test structures that are more sensitive to the contact properties than are bipolar transistors. A phenomenological model was used to correlate the structural properties with electrical measurements. Possible transport mechanisms are examined and estimates are made about upper bounds on transport parameters in the principal regions of the devices. The main conclusion is that the minority-carrier transport in the polycrystalline silicon is dominated by a highly disordered layer at the polysilicon-monosilicon interface characterized by very low minority-carrier mobility. The effective recombination velocity at the n/sup +/ polysilicon-n/sup +/ monosilicon interface was found to be a strong function of fabrication conditions. The results indicate that the recombination velocity can be much smaller than 10/sup 4/ cm/s.

• Research Organization: Department of Electrical Engineering, University of Florida, Gainesville, FL
• OSTI ID: 6102939
• Journal Information: IEEE Trans. Electron Devices; (United States), Journal Name: IEEE Trans. Electron Devices; (United States) Vol. ED-32:4; ISSN IETDA
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
360602 -- Other Materials-- Structure & Phase Studies
360603 -- Materials-- Properties
CARRIER MOBILITY
CHARGE CARRIERS
CHARGE TRANSPORT
CRYSTALLOGRAPHY
CRYSTALS
ELECTRIC CONTACTS
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
ELEMENTS
EQUIPMENT
JUNCTIONS
MATHEMATICAL MODELS
MOBILITY
MONOCRYSTALS
P-N JUNCTIONS
PHYSICAL PROPERTIES
POLYCRYSTALS
RECOMBINATION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
SILICON
STRUCTURAL CHEMICAL ANALYSIS
VELOCITY