Search for Factors Determining the Photodegradation in High-Efficiency a-Si:H-Based Solar Cells; Annual Technical Progress Report, 16 January 1998-15 January 1999
Technical Report
·
OSTI ID:6097625
This report describes studies on glow discharge (GD) and hot-wire a-Si-based samples by the University of North Carolina-Chapel Hill during Phase I. We have characterized H-bonding and its light-induced changes by using infrared (IR) and differential IR (DIR). For the less stable film, there is a simultaneous decrease 2040 cm-1 and increase 1880 cm-1; for the more-stable samples, the DIR near 2000 cm-1 increases upon light-soaking. Nuclear magnetic resonance (NMR) dipolar relaxation time T1D of the clustered H is slightly shorter, but the T1D of the isolated H is 4 times longer in hot-wire (HW) film than that in GD films. The results indicate that the local motion of the isolated H is much slower in HW compared to that in GD film. High-Temperature NMR results show a second narrow line (less than 1 kHz wide) as the temperature is raised. In stress measurements, it is clearly shown that HW films with lower hydrogen content show lower compression. A photoinduced increase of the compression on the order of 10-4 of the initial value upon light-soaking was found to be similar in all a-Si:H films which exhibit different amounts of Staebler-Wronski (SW) degradation. Hence, the volume expansion is not directly related to SW effect. Also, we have measured the electric field profile in a-Si:H and a-SiGe:H solar cells, and the results agreed with computer simulation.
- Research Organization:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 6097625
- Report Number(s):
- NREL/SR-520-26522; ON: DE00009814
- Country of Publication:
- United States
- Language:
- English
Similar Records
Search for Factors Determining the Photodegradation in High-Efficiency a-Si:H-Based Solar Cells; Annual Technical Progress Report, 16 January 1998-15 January 1999
A reduction in the Staebler-Wronski effect observed in low H content a-Si:H films deposited by the hot wire technique
Light-induced structural changes and their correlation to metastable defect creation in intrinsic hydrogenated amorphous silicon films
Technical Report
·
Fri Jun 18 00:00:00 EDT 1999
·
OSTI ID:9814
A reduction in the Staebler-Wronski effect observed in low H content a-Si:H films deposited by the hot wire technique
Conference
·
Sat Aug 10 00:00:00 EDT 1991
· AIP Conference Proceedings (American Institute of Physics); (United States)
·
OSTI ID:7042113
Light-induced structural changes and their correlation to metastable defect creation in intrinsic hydrogenated amorphous silicon films
Journal Article
·
Fri Sep 15 00:00:00 EDT 2000
· Physical Review. B, Condensed Matter and Materials Physics
·
OSTI ID:20217700