Nonconservative formation of [l angle]100[r angle] misfit dislocation arrays at In[sub 0. 2]Ga[sub 0. 8]As/GaAs(001) interfaces during post-growth annealing
- Lawrence Berkeley Laboratory, University of California, Berkeley, California 94720 (United States)
- Sandia National Laboratories, Albuquerque, New Mexico 87185-5800 (United States)
Transmission electron microscopy is applied to investigate the effect of annealing on misfit dislocations in an In[sub 0.2]Ga[sub 0.8]As/GaAs(001) heterostructure. In as-grown samples, an orthogonal array of 60[degree] dislocations along [l angle]110[r angle] directions is observed in the interface. During annealing, the 60[degree] dislocations along [l angle]110[r angle] directions are bent from [l angle]110[r angle] directions toward [l angle]100[r angle] directions. The process represents a new strain relaxation mechanism in semiconductor heterostructures. As the dislocation segments along [l angle]100[r angle] can relieve the strain more effectively than 60[degree] dislocations, we propose that the dislocations move nonconservatively in or near the interface by diffusion along the dislocation cores or in the heterointerface.
- DOE Contract Number:
- AC03-76SF00098; AC04-76DP00789
- OSTI ID:
- 6096402
- Journal Information:
- Applied Physics Letters; (United States), Vol. 63:16; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
GALLIUM ARSENIDES
DISLOCATIONS
HETEROJUNCTIONS
INDIUM ARSENIDES
ANNEALING
DIFFUSION
EPITAXY
HEAT TREATMENTS
STRESS RELAXATION
TRANSMISSION ELECTRON MICROSCOPY
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELECTRON MICROSCOPY
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
JUNCTIONS
LINE DEFECTS
MICROSCOPY
PNICTIDES
RELAXATION
SEMICONDUCTOR JUNCTIONS
360602* - Other Materials- Structure & Phase Studies