Nonconservative formation of [l angle]100[r angle] misfit dislocation arrays at In[sub 0. 2]Ga[sub 0. 8]As/GaAs(001) interfaces during post-growth annealing

Journal Article · Mon Oct 18 04:00:00 EDT 1993 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.110537· OSTI ID:6096402

Chen, Y; Liliental-Weber, Z; Washburn, J ^[1]; Klem, J F; Tsao, J Y ^[2]

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1. Lawrence Berkeley Laboratory, University of California, Berkeley, California 94720 (United States)
2. Sandia National Laboratories, Albuquerque, New Mexico 87185-5800 (United States)

Transmission electron microscopy is applied to investigate the effect of annealing on misfit dislocations in an In[sub 0.2]Ga[sub 0.8]As/GaAs(001) heterostructure. In as-grown samples, an orthogonal array of 60[degree] dislocations along [l angle]110[r angle] directions is observed in the interface. During annealing, the 60[degree] dislocations along [l angle]110[r angle] directions are bent from [l angle]110[r angle] directions toward [l angle]100[r angle] directions. The process represents a new strain relaxation mechanism in semiconductor heterostructures. As the dislocation segments along [l angle]100[r angle] can relieve the strain more effectively than 60[degree] dislocations, we propose that the dislocations move nonconservatively in or near the interface by diffusion along the dislocation cores or in the heterointerface.

• DOE Contract Number: AC03-76SF00098; AC04-76DP00789
• OSTI ID: 6096402
• Journal Information: Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 63:16; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure & Phase Studies
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DIFFUSION
DISLOCATIONS
ELECTRON MICROSCOPY
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HEAT TREATMENTS
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
JUNCTIONS
LINE DEFECTS
MICROSCOPY
PNICTIDES
RELAXATION
SEMICONDUCTOR JUNCTIONS
STRESS RELAXATION
TRANSMISSION ELECTRON MICROSCOPY