Electrical conductivity and thermo-emf of melts of the system Tl-Te-Se

Journal Article · Fri Jul 01 04:00:00 EDT 1988 · High Temp. (Engl. Transl.); (United States)

OSTI ID:6091936

Kazandzhan, B I; Matveev, V M; Umarov, A M

A study was made of the temperature dependences of the electrical conductivity and thermo-emf of melts of ternary system Tl-Te-Se from the melting point to 1000 K. Concentration dependences of these parameters were also established. The data obtained were used with data for binary systems to construct isothermal surfaces of electrical conductivity and thermo-emf for the system Tl-Te-Se at T = 750 K. The results show that it is possible to control the electronic properties of melts of complex semiconductor systems having lamination regions.

• Research Organization: Moscow Energy Institute (USSR)
• OSTI ID: 6091936
• Journal Information: High Temp. (Engl. Transl.); (United States), Journal Name: High Temp. (Engl. Transl.); (United States) Vol. 26:1; ISSN HITEA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602 -- Other Materials-- Structure & Phase Studies
360603* -- Materials-- Properties
CALCULATION METHODS
CHALCOGENIDES
DIAGRAMS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTROMOTIVE FORCE
ISOTHERMS
MATERIALS
MELTING
PHASE DIAGRAMS
PHASE TRANSFORMATIONS
PHYSICAL PROPERTIES
QUANTITY RATIO
SELENIDES
SELENIUM COMPOUNDS
SEMICONDUCTOR MATERIALS
TELLURIDES
TELLURIUM COMPOUNDS
TEMPERATURE DEPENDENCE
THALLIUM COMPOUNDS
THALLIUM SELENIDES
THALLIUM TELLURIDES
THERMOELECTRIC PROPERTIES