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Cross-sectional TEM observation of Nb/AlOx-Al/Nb junction structures

Conference · · IEEE Transactions on Magnetics (Institute of Electrical and Electronics Engineers); (United States)
OSTI ID:6089800
;  [1]
  1. Fujitsu Lab., Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-01 (JP)
This paper reports on a study of microstructure of Nb/AlO{sub x}---Al/Nb Josephson junctions by cross-sectional transmission electron microscopy (TEM) which yielded much information regarding the unction barrier region. Both thick Nb and several-nm Al form polycrystalline films with columnar structures. Nb is oriented to the (110) plane, and Al is (111). The 200-nm lower Nb has a wavy surface with {approximately}5 nm smoothness, but its surface is planarized by several-nm Al deposited on it. Thus AlO{sub x} with a smoothness under 1 nm can be formed on Al. The upper Nb has a good crystalline structure even just above the AlO{sub x} barrier.
OSTI ID:
6089800
Report Number(s):
CONF-900944--
Conference Information:
Journal Name: IEEE Transactions on Magnetics (Institute of Electrical and Electronics Engineers); (United States) Journal Volume: 27:2
Country of Publication:
United States
Language:
English