Characteristics of superconducting flux-flow transistors

Conference · Fri Mar 01 04:00:00 EST 1991 · IEEE Transactions on Magnetics (Institute of Electrical and Electronics Engineers); (United States)

OSTI ID:6088830

Hohenwarter, G K.G. ^[1]; Martens, J S; Thompson, J H; Beyer, J B; Nordman, J E ^[2]; Ginley, D S ^[3]

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1. Hypres, Inc., Elmsford, NY (United States)
2. Wisconsin Univ., Madison, WI (United States). Dept. of Electrical and Computer Engineering
3. Sandia National Labs., Albuquerque, NM (United States)

This paper compares the operational characteristics and physics of three superconducting thin-film based transistor structures. The devices are based on the motion of quantized vortices, either Josephson fluxons in a long tunnel junction or Abrikosov fluxons in a superconducting film. The transistor amplification mechanism, in all three cases, is accomplished by controlling magnetic field at the boundaries of the structure. This paper provides an overview of present understanding of device mechanisms and of measured characteristics, including voltampere relations and small and large signal circuit parameters. Demonstrated applications and anticipated limitations are discussed.

• OSTI ID: 6088830
• Report Number(s): CONF-900944--
• Conference Information: Journal Name: IEEE Transactions on Magnetics (Institute of Electrical and Electronics Engineers); (United States) Journal Volume: 27:2
• Country of Publication: United States
• Language: English

Related Subjects

665411 -- Basic Superconductivity Studies-- (1992-)
665412* -- Superconducting Devices-- (1992-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ABRIKOSOV THEORY
CRYSTAL STRUCTURE
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
FILMS
GRAIN BOUNDARIES
JUNCTION TRANSISTORS
JUNCTIONS
MAGNETIC FIELDS
MAGNETIC FLUX
MICROSTRUCTURE
PARAMETRIC ANALYSIS
PHYSICAL PROPERTIES
SEMICONDUCTOR DEVICES
SUPERCONDUCTING FILMS
SUPERCONDUCTING JUNCTIONS
SUPERCONDUCTIVITY
TRANSISTORS
TUNNEL EFFECT