Superconducting high-T(c) thin-film vortex-flow transistor. Final report, 1 Aug 90-31 Mar 91 on Phase 1

Technical Report · Thu Mar 28 04:00:00 EST 1991

OSTI ID:5475277

Hohenwarter, G K

A device is investigated based on vortex-flow in a superconducting thin-film. This transistor-like device is referred to as a superconducting flux-flow transistor (SFFT). Alongside step edge and grain boundary tunneling junctions the SFFT appears to be a promising candidate for active high temperature circuits. SFFT operation relies on the control of electrical characteristics at the output terminals by a magnetic field at the device boundaries. This field can be provided by the flow of a current in a control line; the device's input resistance hence will be very low. Substantial power grain can result. The low input resistance, yet moderate output resistant of the device appears beneficial for interfacing digital Josephson junction electronics with semiconductor circuits. This was proven in an experiment where Josephson junction was connected to a SFFT.

• Research Organization: Hypress, Inc., Elmsford, NY (United States)
• OSTI ID: 5475277
• Report Number(s): AD-A-235025/4/XAB; CNN: F49620-90-C-0054
• Country of Publication: United States
• Language: English

Related Subjects

426001* -- Engineering-- Superconducting Devices & Circuits-- (1990-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CONTROL
CRYSTAL STRUCTURE
DIGITAL SYSTEMS
ELECTRICAL PROPERTIES
FILMS
GRAIN BOUNDARIES
HIGH-TC SUPERCONDUCTORS
JOSEPHSON JUNCTIONS
JUNCTIONS
MAGNETIC FIELDS
MICROSTRUCTURE
PHYSICAL PROPERTIES
SEMICONDUCTOR DEVICES
SUPERCONDUCTING DEVICES
SUPERCONDUCTING FILMS
SUPERCONDUCTING JUNCTIONS
SUPERCONDUCTORS
THIN FILMS
TRANSISTORS
TUNNELING
USES
VORTICES