Mechanism of open-circuit voltage enhancement in metal-insulator-semiconductor GaAs solar cells

Journal Article · Fri Jan 01 04:00:00 EST 1982 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.92912· OSTI ID:6087116

Srivastava, A K; Guha, S; Arora, B M

Mechanism of open-circuit voltage enhancement in Au thin oxide-n-GaAs (111) solar cells prepared by room-temperature wet oxidation has been studied. In contrast to earlier published results on (100) GaAs, barrier heights for metal-insulator-semiconductor and metal-semiconductor cells are found to be the same, indicating absence of charge in the oxide or significant modification of surface states. It is shown that the increase in open-circuit voltage is mainly caused by suppression of the majority-carrier current due to tunneling through the oxide.

• Research Organization: Tata Institute of Fundamental Research, Homi Bhabha Road, Bombay: 400 005, India
• OSTI ID: 6087116
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 40:1; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
CHALCOGENIDES
CHARGE CARRIERS
COMPARATIVE EVALUATIONS
CRYSTAL LATTICES
CRYSTAL STRUCTURE
DATA
DIRECT ENERGY CONVERTERS
ELECTRIC POTENTIAL
ELECTRICAL EQUIPMENT
ELECTRICAL INSULATORS
ELEMENTS
EQUIPMENT
EXPERIMENTAL DATA
GALLIUM ARSENIDE SOLAR CELLS
GOLD
INFORMATION
MATERIALS
MEDIUM TEMPERATURE
METALS
MIS SOLAR CELLS
NUMERICAL DATA
OXIDES
OXYGEN COMPOUNDS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
POTENTIALS
SEMICONDUCTOR MATERIALS
SOLAR CELLS
SOLAR EQUIPMENT
SURFACES
TRANSITION ELEMENTS
TUNNEL EFFECT