Modification of open-circuit voltage of metal-insulator-semiconductor solar cells due to a nonuniform insulating layer

Journal Article · Tue Jun 01 04:00:00 EDT 1982 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.331201· OSTI ID:5348508

Chau, H L; Cheng, Y C

The effect of nonuniformity of the insulating layer on metal-insulator-semiconductor, open-circuit voltage is examined. It is based on a simplified model in which insulator limits the dark current via different effects. The enhancement in V/sub oc/ could be greatly degraded by surface roughness.

• Research Organization: Department of Electrical Engineering, University of Hong Kong, Hong Kong
• OSTI ID: 5348508
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 53:6; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
DATA
DIRECT ENERGY CONVERTERS
ELECTRIC POTENTIAL
ELECTRICAL EQUIPMENT
ELECTRICAL INSULATORS
EQUIPMENT
INFORMATION
LAYERS
MATHEMATICAL MODELS
MOS SOLAR CELLS
NUMERICAL DATA
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
ROUGHNESS
SOLAR CELLS
SOLAR EQUIPMENT
SURFACE PROPERTIES
SURFACES
THEORETICAL DATA
VARIATIONS