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Interface properties of (Cd,Zn)S/CuInSe/sub 2/ single-crystal solar cells

Journal Article · · J. Vac. Sci. Technol., A; (United States)
DOI:https://doi.org/10.1116/1.575851· OSTI ID:6086101
Metal contacts to p-type CuInSe/sub 2/ and heterojunctions of the form n-(CdZn)S/p-CuInSe/sub 2/ have been prepared, to investigate the electrical behavior and chemical composition of the resulting interfaces and to correlate the results with the composition and corresponding electrical properties of CuInSe/sub 2/ . The results indicate that the observed variability of the back contacts and front junctions of different CuInSe/sub 2/ samples can be attributed to the variable initial equilibrium concentration of the intrinsic defect states which dominate the crystals. The type and concentration of the dominant defects can be changed by thermal treatments and by interface induced effects due to the junction electric field and the chemical potential gradients. Diffusion into or out of the CuInSe/sub 2/ crystals was not detected. More over, no composition or other chemical variation due to the deposition of the sulfide layer was observed.
Research Organization:
Solar Energy Research Institute, Golden, Colorado 80401
OSTI ID:
6086101
Journal Information:
J. Vac. Sci. Technol., A; (United States), Journal Name: J. Vac. Sci. Technol., A; (United States) Vol. 7:3; ISSN JVTAD
Country of Publication:
United States
Language:
English