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High-Tc BiSrCaCuO superconductor grown by CVD technique

Conference · · IEEE Trans. Magn.; (United States)
OSTI ID:6085903
The authors grow single-crystal high-Tc BiSrCaCuO films on (100) MgO substrates in an open tube chemical vapor deposition (CVD) system using metal halide sources and oxygen gas. The morphology of the BiSrCaCuO superconducting layers and MgO insulating layers was satisfactory. The resistivities of the high-Tc layers at 300 K and critical temperatures were zeta=5-20 m..cap omega..-cm and Tc=70-80K for Bi/sub 1/Sr/sub .8/Ca/sub 1/Cu/sub 3.7/O/sub x/ layers 0.1 to 0.3 ..mu..m thick on MgO substrates. The CVD system and characteristics of the high-Tc layers and MgO heteroepitaxial layers as a substrate are discussed.
Research Organization:
Fujitsu Labs. Ltd., Atsugi, 10-1 Morinosato-Wakamiya, Atsugi (JP)
OSTI ID:
6085903
Report Number(s):
CONF-880812-
Conference Information:
Journal Name: IEEE Trans. Magn.; (United States) Journal Volume: 25:2
Country of Publication:
United States
Language:
English

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