Tunneling effect in Cd /SUB x/ Hg /SUB 1-x/ Te photodiodes

Journal Article · Mon Apr 01 04:00:00 EST 1985 · IEEE Trans. Electron Devices; (United States)

DOI:https://doi.org/10.1109/T-ED.1985.22031· OSTI ID:6084135

Placzek-Popko, E; Pawlikowski, J M

The current-voltage I-U characteristics and those of log I-U, dU/dI-U, and d/sup 2/U/dI/sup 2/-U of Cd /SUB x/ Hg /SUB 1-x/ Te (x = 0.20-0.27) photodiodes were measured in the temperature range of 4.2-77 K. The data analysis indicates the backward-type behavior and both the elastic and inelastic resonant-tunneling effects. The resonant tunneling itself seems to originate from resonance-energy states (defect states) located within the junction area.

• Research Organization: Institute of Physics, Technical University of Wroclaw, Wroclaw
• OSTI ID: 6084135
• Journal Information: IEEE Trans. Electron Devices; (United States), Journal Name: IEEE Trans. Electron Devices; (United States) Vol. ED-32:4; ISSN IETDA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
CADMIUM COMPOUNDS
CADMIUM TELLURIDES
CHALCOGENIDES
CURRENTS
DATA ANALYSIS
ELASTICITY
ELECTRIC CURRENTS
ELECTRIC POTENTIAL
ENERGY SPECTRA
JUNCTIONS
LOW TEMPERATURE
MEASURING METHODS
MECHANICAL PROPERTIES
MERCURY COMPOUNDS
MERCURY TELLURIDES
PERFORMANCE
PHOTODIODES
RESONANCE
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR JUNCTIONS
SPECTRA
TELLURIDES
TELLURIUM COMPOUNDS
TENSILE PROPERTIES
TUNNEL EFFECT
ULTRALOW TEMPERATURE