Structure of oxygen-implanted (111) silicon before and after heat-pulse annealing
Conference
·
OSTI ID:6083817
The structure of oxygen-implanted silicon (dose -7.3 x 10/sup 16/cm/sup -2/) has been studied by transmission electron microscopy (TEM). The as-implanted material exhibited four structurally different layers: defect-free monocrystalline silicon, amorphous silicon, monocrystalline silicon with a high defect density, and the perfect crystalline substrate. After heat-pulse annealing for 20 s at 800/sup 0/C, 900/sup 0/C, or 1000/sup 0/C, the amorphous layer recrystallized resulting in polycrystalline silicon rich in oxygen. The uniform insulator buried layer was not formed under these specific implantation and annealing conditions.
- Research Organization:
- Lawrence Berkeley Lab., CA (USA); New South Wales Univ., Kensington (Australia). School of Physics
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 6083817
- Report Number(s):
- LBL-20631; CONF-851217-54; ON: DE86007454
- Country of Publication:
- United States
- Language:
- English
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