Observation of positive and negative nonlinear gain in an optical injection experiment: Proof of the cavity standing-wave-induced nonlinear gain theory in 1. 3. mu. m wavelength semiconductor diode lasers

Journal Article · Mon May 01 04:00:00 EDT 1989 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.101274· OSTI ID:6082176

Eom, J; Su, C B

The origin of nonlinear gain in 1.3 ..mu..m InGaAsP semiconductor diode lasers is studied by measuring the magnitude and phase of a probe laser's frequency response to optical injection with orthogonally polarized light from a pump laser. The sign and magnitude of the gain nonlinearity induced by optical injection depend on wavelength separation between pump and probe laser. The maximum magnitude of the nonlinear gain parameter is about 1.5 x 10/sup -15/ cm/sup 2/. These results are consistent with the recently proposed theory that nonlinear gain is caused by the feedback from the dielectric grating induced by the standing wave in the laser cavity.

• Research Organization: Department of Electrical Engineering, Texas AandM University, College Station, Texas 77843
• OSTI ID: 6082176
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 54:18; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
DATA
EXPERIMENTAL DATA
GAIN
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
GRATINGS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFORMATION
LASER CAVITIES
LASERS
NONLINEAR OPTICS
NUMERICAL DATA
OPTICS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SPECTRAL RESPONSE