The effects of ion beam etching on Si, Ge, GaAs, and InP Schottky barrier diodes

Journal Article · Mon Apr 01 00:00:00 EST 1985 · J. Electrochem. Soc.; (United States)

DOI:https://doi.org/10.1149/1.2113985· OSTI ID:6079352

Wu, C S; Chen, W X; Lau, S S; Scott, D M

The effects of ion beam etching (IBE) on the electrical properties of Schottky barriers on four kinds of semiconductors (Si, Ge, InP, and GaAs) were investigated. For diodes processed with IBE after metal depositio where the active device region is protected by the metal layer and only the surrounding substrate area is exposed to the beam, our results showed that the diode breakdown voltages increased 2-15 times for p-type substrates, but decreased 2-4 times for n-type substrates. The barrier heights, /PHI/ /SUB B/ /SUP P/ , on p substrates were observed to remain unchanged, while the barrier heights, /PHI/ /SUB B/ /SUP n/ , were found to decrease on n substrates. For diodes processed with IBE before metal deposition, the diode characteristics are similar to those processed with IBE after metal deposition; the only notable exception is the barrier heights on p substrates increased for this case, while /PHI/ /SUB B/ /SUP P/ remained unchanged for diodes processe with IBE after metal depostion. The effects of IBE are observed to disappear and the diodes recover to their original characteristics upon annealing at temperatures between 300/sup 0/ and 375/sup 0/C. These effects are consistent with the concept that ion beam processing induces donor-like defects near the surface region of the semiconductor exposed to the ions.

• Research Organization: Department of Electrical Engineering and Computer Sciences, University of California at San Diego, La Jolla, CA
• OSTI ID: 6079352
• Journal Information: J. Electrochem. Soc.; (United States), Vol. 132:4
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
36 MATERIALS SCIENCE
SCHOTTKY BARRIER DIODES
ELECTRICAL PROPERTIES
ETCHING
N-TYPE CONDUCTORS
P-TYPE CONDUCTORS
ANNEALING
CRYSTAL DEFECTS
DEPOSITION
FABRICATION
GALLIUM ARSENIDES
GERMANIUM
HIGH TEMPERATURE
INDIUM PHOSPHIDES
ION BEAMS
SEMICONDUCTOR MATERIALS
SILICON
SUBSTRATES
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
CRYSTAL STRUCTURE
ELEMENTS
GALLIUM COMPOUNDS
HEAT TREATMENTS
INDIUM COMPOUNDS
MATERIALS
METALS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMIMETALS
SURFACE FINISHING
420800* - Engineering- Electronic Circuits & Devices- (-1989)
360601 - Other Materials- Preparation & Manufacture
360602 - Other Materials- Structure & Phase Studies