Effect of transport currents on the critical state of YBa[sub 2]Cu[sub 3]O[sub 7[minus][delta]] thin films

Journal Article · Mon Nov 01 04:00:00 EST 1993 · Physical Review, B: Condensed Matter; (United States)

DOI:https://doi.org/10.1103/PhysRevB.48.13192· OSTI ID:6077495

Darwin, M; Deak, J; Hou, L; McElfresh, M ^[1]; Zeldov, E ^[2]; Clem, J R ^[3]; Indenbom, M ^[4]

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1. Physics Department, Purdue University, West Lafayette, Indiana 47907 (United States)
2. Physics Department, Weizmann Institute of Science, Rehovot, 76100 (Israel)
3. Ames Laboratory and Department of Physics and Astronomy, Iowa State University, Ames, Iowa 50011 (United States)
4. Max-Planck-Institut fuer Metallforschung, Institut fuer Physik, Heisenbergstrasse 1, D-7000 Stuttgart 80 (Germany)

After preparation of the remanent critical state, the normal component of the local time-dependent magnet field [ital B][sub [ital z]] near the surface of a YBa[sub 2]Cu[sub 3]O[sub 7[minus][delta]] thin film was measured before, during, and after the application of a transport current. The results are shown to be consistent with new calculations of [ital B][sub [ital z]] for the thin film geometry. The calculated behavior in a thin film is shown to be substantially different from that of the Bean critical state in a long slab in a parallel field. In slab geometry, starting from the remanent critical state, [vert bar][ital J]([ital x])[vert bar] is always equal to [ital J][sub [ital c]], whereas in thin films a continuous distribution of current densities [ital J]([ital x]) is found. This feature results in a unique distribution of the magnetic field [ital B][sub [ital z]] and unusual magnetic relaxation behavior in the presence of a transport current.

• DOE Contract Number: FG02-90ER45427; W-7405-ENG-82
• OSTI ID: 6077495
• Journal Information: Physical Review, B: Condensed Matter; (United States), Journal Name: Physical Review, B: Condensed Matter; (United States) Vol. 48:17; ISSN 0163-1829; ISSN PRBMDO
• Country of Publication: United States
• Language: English

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