Distribution and characterization of iron in implanted silicon carbide

Conference · Mon Dec 31 23:00:00 EST 1990

OSTI ID:6072918

Bentley, J; Romana, L J; Horton, L L ^[1]; McHargue, C J ^[2]

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1. Oak Ridge National Lab., TN (United States)
2. Tennessee Univ., Knoxville, TN (United States)

Analytical electron microscopy (AEM) and Rutherford backscattering spectroscopy-ion channeling (RBS-C) have been used to characterize single crystal {alpha}-silicon carbide implanted at room temperature with 160 keV {sup 57}Fe ions to fluences of 1, 3, and 6 {times} 10{sup 16} ions/cm{sup 2}. Best correlations among AEM, RBS, and TRIM calculations were obtained assuming a density of the amorphized implanted regions equal to that of crystalline SiC. No iron-rich precipitates or clusters were detected by AEM. Inspection of the electron energy loss fine structure for iron in the implanted specimens suggests that the iron is not metallically-bonded, supporting conclusions from earlier conversion electron Moessbauer spectroscopy (CEMS) studies. In-situ annealing surprisingly resulted in crystallization at 600{degrees}C with some redistribution of the implanted iron.

• Research Organization: Oak Ridge National Lab., TN (United States)
• Sponsoring Organization: DOE; USDOE, Washington, DC (United States)
• DOE Contract Number: AC05-84OR21400
• OSTI ID: 6072918
• Report Number(s): CONF-911202-14; ON: DE92005126
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360201 -- Ceramics
Cermets
& Refractories-- Preparation & Fabrication
360202 -- Ceramics
Cermets
& Refractories-- Structure & Phase Studies
360206* -- Ceramics
Cermets
& Refractories-- Radiation Effects
ANNEALING
CARBIDES
CARBON COMPOUNDS
CHARGED PARTICLES
CRYSTALS
ELECTRON MICROSCOPY
HEAT TREATMENTS
ION IMPLANTATION
IONS
IRON IONS
IRRADIATION
MICROSCOPY
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SILICON CARBIDES
SILICON COMPOUNDS
SURFACES