Operational characteristics of SF sub 6 etching in an electron cyclotron resonance plasma reactor

Conference · · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)

OSTI ID:6072811

Cecchi, J L; Stevens, J E; Jarecki, R L; Huang, Y C ^[1]

---

1. Princeton Univ., NJ (United States)

The initial operation of an electron cyclotron resonance (ECR) plasma etch tool, utilized in a downstream configuration of SF{sub 6} etching of polysilicon is described. Practical operational characteristics that are generic to high-density, wave-supported plasma sources operated in downstream configurations were explored. A method for improved coupling of the microwave power to the ECR source is described. This method elimates the need for external tuning. The effect of wall impurities on the plasma and etching characteristics is also considered. A scheme for conditioning the walls to alleviate the effects of impurities is presented. Finally, the complicated relationship between the ECR source plasma and the downstream wafer is considered, by examining the scaling of the plasma electron density in the two regions with microwave power and gas pressure. The phenomena discussed here apply to other etching chemistries and can have a significant impact on process integrity and ease of operation.

• OSTI ID: 6072811
• Report Number(s): CONF-9009402--
• Conference Information: Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States) Journal Volume: 9:2
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
CYCLOTRON RESONANCE
ELECTRON CYCLOTRON-RESONANCE
ELECTRON DENSITY
ELEMENTS
ETCHING
FLUORIDES
FLUORINE COMPOUNDS
HALIDES
HALOGEN COMPOUNDS
MICROWAVE POWER TRANSMISSION
OPERATION
PLASMA GUNS
PLASMA JETS
POWER TRANSMISSION
PRESSURE EFFECTS
RESONANCE
SEMIMETALS
SILICON
SULFUR COMPOUNDS
SULFUR FLUORIDES
SURFACE FINISHING