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Large grain polycrystalline silicon films on graphite for solar cell applications

Conference · · Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)
OSTI ID:6070742
Polycrystalline silicon layers are investigated on low cost graphite substrates. A closed space CVD deposition technique is used to deposit a highly doped Si-layer of 20 ..mu..m thickness on a polished graphite substrate. To improve the crystallize size the Si-film is recrystallized by means of a moving tungsten filament. The recrystallized silicon layer acts as a selective bulk contact and as a growing matrix for the active layer, which is deposited in a second CVD process. SIS-solar cells made with spray pyrolysis of SnO/sub 2/ give efficiencies between 7 and 9%.
Research Organization:
Institute for Experimental Physics, University of Innsbruck
OSTI ID:
6070742
Report Number(s):
CONF-840561-
Conference Information:
Journal Name: Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)
Country of Publication:
United States
Language:
English