Electrical and structural properties of the Si/C interface in poly-Si thin films on graphite substrates

Book · Sat Dec 31 04:00:00 EST 1994

OSTI ID:191036

Reindl, T; Kruehler, W ^[1]; Pauli, M; Mueller, J ^[2]

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1. Siemens AG, Munich (Germany). Corporate Research and Development
2. Technical Univ. Hamburg-Harburg, Hamburg (Germany). Dept. of Semiconductor Technology

For the first time the Si/C interface in poly-Si thin films on graphite substrate is described. The isostatically pressed graphite is covered with a 3--5 {micro}m thick amorphous silicon layer which is recrystallized by the ZMR method (zone melting recrystallization by means of a line electron beam). During ZMR the molten silicon penetrates into the graphite pores, while at the interface {beta}-SiC particles with a size of 50--1,000 nm were formed (TEM, SEM analysis). Furthermore there exists a reaction zone where Si, SiC and C are found by electron diffraction. As a consequence the poly-Si layer shows an excellent adhesion to the substrate. Since there is no continuous electrically insulating SiC layer formed, highly boron doped seed layers show an Ohmic contact to the graphite. The investigated poly-Si thin films on graphite substrate offer a great potential for photovoltaic application after epitaxy up to 50 {micro}m by LPE or CVD.

• OSTI ID: 191036
• Report Number(s): CONF-941203--; ISBN 0-7803-1459-X
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
BORON
CHEMICAL REACTIONS
CHEMICAL VAPOR DEPOSITION
CHLORINE COMPOUNDS
COMPOSITE MATERIALS
DOPED MATERIALS
ELECTRICAL PROPERTIES
EXPERIMENTAL DATA
GRAIN SIZE
GRAPHITE
INTERFACES
ION MICROPROBE ANALYSIS
MASS SPECTROSCOPY
MICROSTRUCTURE
PHOSPHORUS
RECRYSTALLIZATION
SCANNING ELECTRON MICROSCOPY
SILANES
SILICON
SILICON CARBIDES
SILICON SOLAR CELLS
TRANSMISSION ELECTRON MICROSCOPY
ZONE MELTING