Defect structure of semiconducting and insulating epitafial oxides
The study of the defect structure of semiconducting and insulating epitaxial oxides has continued. During this period, the growth and characterization of epitaxial BaTiO{sub 3} and SrTiO{sub 3} layers were undertaken. For the growth of the epitaxial oxides, an organometallic chemical vapor deposition technique was developed. For the deposition of BaTiO{sub 3}, we developed and used the second generation Ba precursor, barium (hexafluoroacetylacetonate){sub 2} (tetraglyme)(Ba(hfa){sub 2}{center dot}tet) along with titanium tetraisoproxide as the titanium precursor. Recently, we have succeeded in depositing epitaxial BaTiO{sub 3} by using single crystalline LaAlO{sub 3} substrates. This development should significantly improve our electronic property and defect structure measurements since grain boundaries are eliminated in the layers. The structure of the epitaxial BaTiO{sub 3} was examined using both x-ray diffractometer measurements and high-resolution transmission electron microscopy (HRTEM).
- Research Organization:
- Northwestern Univ., Evanston, IL (United States)
- Sponsoring Organization:
- DOE; USDOE, Washington, DC (United States)
- DOE Contract Number:
- FG02-85ER45209
- OSTI ID:
- 6068699
- Report Number(s):
- DOE/ER/45209-6; ON: DE92005080
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360202* -- Ceramics
Cermets
& Refractories-- Structure & Phase Studies
ALKALINE EARTH METAL COMPOUNDS
BARIUM COMPOUNDS
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DEEP LEVEL TRANSIENT SPECTROSCOPY
DEPOSITION
DOCUMENT TYPES
ELECTRON MICROSCOPY
FILMS
MICROSCOPY
OPTICAL PROPERTIES
ORGANIC COMPOUNDS
ORGANOMETALLIC COMPOUNDS
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
PROGRESS REPORT
SPECTROSCOPY
STRONTIUM COMPOUNDS
STRONTIUM TITANATES
SUBSTRATES
SURFACE COATING
THIN FILMS
TITANATES
TITANIUM COMPOUNDS
TRANSITION ELEMENT COMPOUNDS
TRANSMISSION ELECTRON MICROSCOPY