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U.S. Department of Energy
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Defect structure of semiconducting and insulating epitafial oxides

Technical Report ·
DOI:https://doi.org/10.2172/6068699· OSTI ID:6068699

The study of the defect structure of semiconducting and insulating epitaxial oxides has continued. During this period, the growth and characterization of epitaxial BaTiO{sub 3} and SrTiO{sub 3} layers were undertaken. For the growth of the epitaxial oxides, an organometallic chemical vapor deposition technique was developed. For the deposition of BaTiO{sub 3}, we developed and used the second generation Ba precursor, barium (hexafluoroacetylacetonate){sub 2} (tetraglyme)(Ba(hfa){sub 2}{center dot}tet) along with titanium tetraisoproxide as the titanium precursor. Recently, we have succeeded in depositing epitaxial BaTiO{sub 3} by using single crystalline LaAlO{sub 3} substrates. This development should significantly improve our electronic property and defect structure measurements since grain boundaries are eliminated in the layers. The structure of the epitaxial BaTiO{sub 3} was examined using both x-ray diffractometer measurements and high-resolution transmission electron microscopy (HRTEM).

Research Organization:
Northwestern Univ., Evanston, IL (United States)
Sponsoring Organization:
DOE; USDOE, Washington, DC (United States)
DOE Contract Number:
FG02-85ER45209
OSTI ID:
6068699
Report Number(s):
DOE/ER/45209-6; ON: DE92005080
Country of Publication:
United States
Language:
English