Defect structure of semiconducting and insulating epitafial oxides. Progress report, May 1, 1991--April 30, 1992
The study of the defect structure of semiconducting and insulating epitaxial oxides has continued. During this period, the growth and characterization of epitaxial BaTiO{sub 3} and SrTiO{sub 3} layers were undertaken. For the growth of the epitaxial oxides, an organometallic chemical vapor deposition technique was developed. For the deposition of BaTiO{sub 3}, we developed and used the second generation Ba precursor, barium (hexafluoroacetylacetonate){sub 2} (tetraglyme)(Ba(hfa){sub 2}{center_dot}tet) along with titanium tetraisoproxide as the titanium precursor. Recently, we have succeeded in depositing epitaxial BaTiO{sub 3} by using single crystalline LaAlO{sub 3} substrates. This development should significantly improve our electronic property and defect structure measurements since grain boundaries are eliminated in the layers. The structure of the epitaxial BaTiO{sub 3} was examined using both x-ray diffractometer measurements and high-resolution transmission electron microscopy (HRTEM).
- Research Organization:
- Northwestern Univ., Evanston, IL (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- FG02-85ER45209
- OSTI ID:
- 10109833
- Report Number(s):
- DOE/ER/45209--6; ON: DE92005080
- Country of Publication:
- United States
- Language:
- English
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