Metal insulator semiconductor heterostructure lasers

Patent · Tue Sep 04 00:00:00 EDT 1990

OSTI ID:6068395

Jain, F C

This patent describes a metal insulator semiconductor (MIS) heterostructure laser emitting light in the blue region of the visible spectrum having the following strata extending along the length thereof. It comprises: a substrate having at least its top surface portion formed by a compound selected from the group consisting of zinc selenide (ZnSe), zinc sulfoselenide (ZnSSe), zinc manganese selenide (ZnMnSe); a confining layer of a compound selected from the group consisting of zinc sulfoselenide (ZnSSe) and zinc manganese selenide (ZnMnSe); an active layer of a compound selected from the group consisting of n-type zinc selenide (ZnSe), n-type zinc sulfoselenide (ZnSSe) and n-type zinc manganese selenide (ZnMnSe); a thin insulator layer of a material having an effective energy gap which is greater than a lasing wave length; a top layer of alternating stripes of reflective barrier metal and thick insulating material, the thin insulator layer and barrier metal acting in concert to provide an inverted surface at the active layer; and an electrical contact on the substrate.

• Assignee: Univ. of Connecticut, Storrs, CT (USA)
• Patent Number(s): US 4955031; A
• Application Number: PPN: US s 7-217637
• OSTI ID: 6068395
• Resource Relation: Patent File Date: 12 Jul 1988
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
ELECTRICAL INSULATORS
DESIGN
MANGANESE SELENIDES
SULFUR COMPOUNDS
VISIBLE RADIATION
ZINC SELENIDES
CHALCOGENIDES
ELECTRICAL EQUIPMENT
ELECTROMAGNETIC RADIATION
EQUIPMENT
LASERS
MANGANESE COMPOUNDS
RADIATIONS
SELENIDES
SELENIUM COMPOUNDS
SEMICONDUCTOR DEVICES
SOLID STATE LASERS
TRANSITION ELEMENT COMPOUNDS
ZINC COMPOUNDS
426002* - Engineering- Lasers & Masers- (1990-)