Quantum well diode lasers of lead-europium-selenide-telluride

Journal Article · Fri Mar 01 00:00:00 EST 1985 · J. Vac. Sci. Technol., B; (United States)

DOI:https://doi.org/10.1116/1.583183· OSTI ID:6062848

Partin, D L; Majkowski, R F; Swets, D E

The formation of a new semiconductor compound, lead-europium-selenide-telluride, was recently demonstrated using the molecular beam epitaxy (MBE) growth technique. This material may be grown lattice matched to PbTe substrates, and double heterojunction diode lasers were fabricated which covered the wavelength range 6.6 to 2.7 ..mu..m. Operation up to 147 K has been attained, which is the highest cw operating temperature ever observed in lead-chalcogenide semiconductors. Single quantum well diode lasers in a lead-chalcogenide materials system have now been fabricated for the first time. These devices were composed of PbTe quantum wells with Pb/sub 1-x/Eu/sub x/Se/sub y/Te/sub 1-y/ confinement layers. The quantum wells ranged in thickness from 300 to 2500 A. Strong quantum effects are observed for the smaller well widths (L/sub z/ < or approx. =1200 A) because of the small carrier masses (m/sub e/approx.m/sub h/approx.0.037m/sub 0/). The shift in laser emission energy is in approximate agreement with that calculated from a finite square well potential if ..delta..E/sub c/approx...delta..E/sub v/ is assumed. The near equality of the electron and hole effective masses makes it difficult to accurately determine ..delta..E/sub c/ and ..delta..E/sub v/. The threshold current is strongly reduced by quantum effects, apparently because of modifications of the density-of-states function. The laser emission from these devices has been characterized by near-field and far-field measurements.

• Research Organization: Physics Department, General Motors Research Laboratories, Warren, Michigan 48090-9055
• OSTI ID: 6062848
• Journal Information: J. Vac. Sci. Technol., B; (United States), Vol. 3:2
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
FABRICATION
HETEROJUNCTIONS
LASER RADIATION
OPERATION
EFFECTIVE MASS
ELECTRONS
EUROPIUM SELENIDES
EUROPIUM TELLURIDES
EXPERIMENTAL DATA
HOLES
LEAD SELENIDES
LEAD TELLURIDES
LOW TEMPERATURE
MOLECULAR BEAM EPITAXY
TUNING
CHALCOGENIDES
DATA
ELECTROMAGNETIC RADIATION
ELEMENTARY PARTICLES
EPITAXY
EUROPIUM COMPOUNDS
FERMIONS
INFORMATION
JUNCTIONS
LASERS
LEAD COMPOUNDS
LEPTONS
MASS
NUMERICAL DATA
RADIATIONS
RARE EARTH COMPOUNDS
SELENIDES
SELENIUM COMPOUNDS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
TELLURIDES
TELLURIUM COMPOUNDS
420300* - Engineering- Lasers- (-1989)