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Title: Damage growth in Si during self-ion irradiation: A study of ion effects over an extended energy range

Abstract

Damage nucleation/growth in single-crystal Si during ion irradiation is discussed. For MeV ions, the rate of growth as well as the damage morphology are shown to vary widely along the track of the ion. This is attributed to a change in the dominant, defect-related reactions as the ion penetrates the crystal. The nature of these reactions were elucidated by studying the interaction of MeV ions with different types of defects. The defects were introduced into the Si crystal prior to high-energy irradiation by self-ion implantation at a medium energy (100 keV). Varied damage morphologies were produced by implanting different ion fluences. Electron microscopy and ion-channeling measurements, in conjunction with annealing studies, were used to characterize the damage. Subtle changes in the predamage morphology are shown to result in markedly different responses to the high-energy irradiation, ranging from complete annealing of the damage to rapid growth. These divergent responses occur over a narrow range of dose (2--3 /times/ 10/sup 14/ cm/sup /minus/2/) of the medium-energy ions; this range also marks a transition in the growth behavior of the damage during the predamage implantation. A model is proposed which accounts for these observations and provides insight into ion-induced growth of amorphous layersmore » in Si and the role of the amorphous/crystalline interface in this process. 15 refs, 9 figs.« less

Authors:
; ;
Publication Date:
Research Org.:
Oak Ridge National Lab., TN (USA)
OSTI Identifier:
6052971
Report Number(s):
CONF-890426-24
ON: DE89015044
DOE Contract Number:  
AC05-84OR21400
Resource Type:
Conference
Resource Relation:
Conference: Spring meeting of the Materials Research Society, San Diego, CA, USA, 24-28 Apr 1989; Other Information: Portions of this document are illegible in microfiche products
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ION IMPLANTATION; RADIATION EFFECTS; SILICON; NUCLEATION; AMORPHOUS STATE; ANNEALING; BISMUTH IONS; DAMAGE; DEFECTS; DIFFRACTION; IRRADIATION; SILICON IONS; CHARGED PARTICLES; COHERENT SCATTERING; ELEMENTS; HEAT TREATMENTS; IONS; SCATTERING; SEMIMETALS; 360102* - Metals & Alloys- Structure & Phase Studies; 656003 - Condensed Matter Physics- Interactions between Beams & Condensed Matter- (1987-)

Citation Formats

Holland, O.W., El-Ghor, M.K., and White, C.W. Damage growth in Si during self-ion irradiation: A study of ion effects over an extended energy range. United States: N. p., 1989. Web.
Holland, O.W., El-Ghor, M.K., & White, C.W. Damage growth in Si during self-ion irradiation: A study of ion effects over an extended energy range. United States.
Holland, O.W., El-Ghor, M.K., and White, C.W. Sun . "Damage growth in Si during self-ion irradiation: A study of ion effects over an extended energy range". United States. https://www.osti.gov/servlets/purl/6052971.
@article{osti_6052971,
title = {Damage growth in Si during self-ion irradiation: A study of ion effects over an extended energy range},
author = {Holland, O.W. and El-Ghor, M.K. and White, C.W.},
abstractNote = {Damage nucleation/growth in single-crystal Si during ion irradiation is discussed. For MeV ions, the rate of growth as well as the damage morphology are shown to vary widely along the track of the ion. This is attributed to a change in the dominant, defect-related reactions as the ion penetrates the crystal. The nature of these reactions were elucidated by studying the interaction of MeV ions with different types of defects. The defects were introduced into the Si crystal prior to high-energy irradiation by self-ion implantation at a medium energy (100 keV). Varied damage morphologies were produced by implanting different ion fluences. Electron microscopy and ion-channeling measurements, in conjunction with annealing studies, were used to characterize the damage. Subtle changes in the predamage morphology are shown to result in markedly different responses to the high-energy irradiation, ranging from complete annealing of the damage to rapid growth. These divergent responses occur over a narrow range of dose (2--3 /times/ 10/sup 14/ cm/sup /minus/2/) of the medium-energy ions; this range also marks a transition in the growth behavior of the damage during the predamage implantation. A model is proposed which accounts for these observations and provides insight into ion-induced growth of amorphous layers in Si and the role of the amorphous/crystalline interface in this process. 15 refs, 9 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1989},
month = {1}
}

Conference:
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