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High /ital T//sub /ital c// Y-Ba-Cu-O thin films on Si substrates

Journal Article · · J. Appl. Phys.; (United States)
DOI:https://doi.org/10.1063/1.344402· OSTI ID:6052077

A low temperature process of vacuum codeposition at 550 /degree/C was used to prepare superconducting Y-Ba-Cu-O thin films on Si substrates without a buffer layer. A zero resistance critical temperature /ital T//sub /ital ce// as high as 81.5 K was reached without further high-temperature post-annealing treatment. The surface morphology of films has a granular or porous character dependent on substrate temperature. The atomic emission spectroscopy shows the diffusion of Si from the substrate into the films at the level of several atomic percent.

Research Organization:
Institute of Electrical Engineering, Electro-physical Research Centre, Slovak Academy of Science, 842 39 Bratislava, Czechoslovakia(CS); Institute of Physics, Electro-Physical Research Centre, Slovak Academy of Science, 842 39 Bratislava, Czechoslovakia; Czechoslovak Institute of Metrology, 842 55 Bratislava, Czechoslovakia
OSTI ID:
6052077
Journal Information:
J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 66:3; ISSN JAPIA
Country of Publication:
United States
Language:
English